NHDTA114YTR

Overview

The NHDTA114YTR is a PNP Resistor-Equipped Transistor (RET) from Nexperia, housed in an SOT-23 surface-mount package. It integrates a PNP transistor with built-in bias resistors: R1 is typically 10 kΩ and R2 is typically 47 kΩ, yielding a ratio of 4.7. Key electrical parameters include a collector-emitter voltage (VCEO) of -80 V, continuous collector current (IO) of -100 mA, and total power dissipation (Ptot) of 250 mW at 25 °C. The device features a minimum DC current gain (hFE) of 100 and a transition frequency (fT) of 150 MHz. Operating temperatures range from -55 °C to +150 °C.

Feature Summary

• Integrates a PNP transistor with built-in bias resistors to simplify circuit design and reduce component count.
• Provides high breakdown voltage capability suitable for various digital switching applications.
• Offers 100 mA output current capability within a compact SOT-23 plastic package.

Applications

• Digital applications
• Controlling IC inputs
• Switching loads

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the non-automotive qualified status aligns with the intended application requirements, as automotive-grade alternatives may be necessary for specific industry standards. Cross-reference the marking code QB% with production data sheets for accurate identification during assembly.

Selection Notes

Select this component when a PNP switch with integrated base biasing is required to minimize external passive components. The 10 kΩ input resistor value suits standard logic interface levels. Ensure the thermal management strategy accounts for the 250 mW power dissipation limit in free air or on FR4 PCBs, considering the junction-to-ambient thermal resistance characteristics provided in the datasheet.

Part Context

This part belongs to the NHDTA123JT/143ZT/114YT series of PNP resistor-equipped transistors. It serves as the variant with a 10 kΩ input resistor and 47 kΩ feedback resistor. The NPN complement for this family is the NHDTC114YT. The series is designed for cost-effective digital switching solutions in small form-factor electronics.

Replacement Considerations

Direct substitutes within the same series include NHDTA123JT and NHDTA143ZT, though they feature different internal resistor values (2.2 kΩ and 4.7 kΩ respectively). For equivalent functionality with identical resistor ratios, verify compatibility with other manufacturers' PNP RETs offering similar 10 kΩ input resistance and -80 V rating.

FAQ

What are the typical values for the built-in resistors in the NHDTA114YTR?

The typical value for bias resistor 1 (R1) is 10 kΩ, and the typical value for bias resistor 2 (R2) is 47 kΩ.

Is the NHDTA114YTR automotive qualified?

No, according to the product data sheet revision history, this specific product is not automotive qualified. Customers requiring automotive qualification should consult Nexperia for alternative products.

What is the maximum collector-emitter voltage for this device?

The maximum collector-emitter voltage (VCEO) with an open base is -80 V.