NHDTA114YTVL

Overview

The NHDTA114YTVL is a PNP Resistor-Equipped Transistor (RET) from the Nexperia NHDTA123JT/143ZT/114YT series, housed in an SOT23 surface-mounted device plastic package. It features a collector-emitter voltage of -80 V and an output current capability of -100 mA. The device integrates two bias resistors: R1 is 10 kΩ and R2 is 47 kΩ. Key electrical characteristics include a DC current gain (hFE) of at least 100 at -10 mA, a collector-emitter saturation voltage of -100 mV maximum, and a transition frequency of 150 MHz typical. Total power dissipation reaches 250 mW on single-sided copper PCBs.

Feature Summary

• Integrates built-in bias resistors to simplify circuit design and reduce component count.
• Provides high breakdown voltage suitable for demanding digital switching applications.
• Offers 100 mA output current capability within a compact SOT23 package.

Applications

• Digital logic applications
• Controlling IC inputs
• Switching loads

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details such as reel or tape specifications. Confirm that the non-automotive qualified status aligns with the target application requirements, as automotive-grade alternatives may be necessary for critical systems.

Selection Notes

Select this component when a PNP transistor with integrated base and pull-down resistors is required to minimize board space. Ensure the 10 kΩ input resistor value matches the driving source impedance and desired switching speed. Verify thermal constraints against the specified power dissipation limits for the intended PCB footprint.

Part Context

This part belongs to the NHDTA123JT/143ZT/114YT series of PNP resistor-equipped transistors. It serves as the PNP counterpart to the NHDTC114YT NPN RET. The series provides standardized resistor ratios for common digital interface tasks, replacing discrete resistor networks with a single surface-mount component.

Replacement Considerations

NHDTA114YU