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The NHDTA123JT-QR is a PNP resistor-equipped transistor (RET) manufactured by Nexperia USA Inc. It integrates a single PNP bipolar junction transistor with built-in biasing resistors in a leadless SOT-23 (TO-236AB) surface-mount package. The device supports a maximum collector-emitter voltage of -80 V and a continuous collector current of -100 mA. Internal resistance values are specified as R1 = 2.2 kΩ and R2 = 47 kΩ. Key electrical parameters include a DC current gain (hFE) minimum of 100 at 10 mA, saturation voltage of 100 mV at 500 µA base and 10 mA collector, and a transition frequency of 150 MHz. Power dissipation is rated at 250 mW, with an operating temperature range from -55°C to +150°C.
Verify the specific suffix 'QR' against official Nexperia documentation to confirm reel specifications and tape-and-reel dimensions. Ensure the ordering part number matches the required packaging format for automated assembly processes. Cross-reference the manufacturer's longevity program data to assess long-term availability and production status before finalizing procurement plans.
Select this component when a PNP configuration is required with integrated biasing to minimize board space and assembly costs. Compare internal resistor values (2.2 kΩ and 47 kΩ) against circuit requirements to ensure proper drive characteristics. Verify that the -80 V rating and -100 mA current capacity exceed the application's peak operational demands.
This part belongs to the NHDTA series of PNP resistor-equipped transistors from Nexperia. It serves as the PNP counterpart to the NHDTC123JT series. Both families share similar electrical characteristics and packaging options, providing designers with complementary options for digital switching applications requiring high integration density.
The PDTC123JT is an NPN complement within the same family but differs in polarity. Direct substitution requires circuit topology adjustment. No other public substitute part numbers are confirmed for this specific model.