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The NHDTA123JTR is a PNP Resistor-Equipped Transistor (RET) from Nexperia, housed in an SOT-23 surface-mount package. It integrates a PNP transistor with built-in bias resistors R1 (2.2 kΩ typical) and R2 (47 kΩ typical). Key electrical parameters include a collector-emitter voltage (VCEO) of -80 V, a continuous output current (IO) of -100 mA, and a DC current gain (hFE) minimum of 100 at IC = -10 mA. The device features a transition frequency (fT) of 150 MHz and operates within a junction temperature range of -55 °C to 150 °C.
Verify the specific ordering suffix against the manufacturer's current documentation to confirm packaging format and reel specifications. Confirm that the product status aligns with project requirements, as data sheet revisions may indicate changes in qualification or availability. Ensure compatibility with intended manufacturing processes before finalizing procurement orders.
Select this component when a PNP switching solution with integrated base biasing is required to minimize external components. Verify that the -80 V collector-emitter voltage rating exceeds the maximum operating voltage in the target circuit. Check that the -100 mA output current capability meets the load requirements and that the SOT-23 package fits the available PCB footprint constraints.
The NHDTA123JT belongs to the Nexperia PNP Resistor-Equipped Transistor family, which also includes variants like NHDTA143ZT and NHDTA114YT with different resistor values. These devices are designed as cost-saving alternatives to discrete resistor-transistor combinations in digital logic interfaces. The NHDTC123JT serves as the complementary NPN version within the same series.
Direct functional substitutes within the same series include NHDTA143ZT and NHDTA114JT, though they feature different internal resistor values. For complementary NPN applications, consider the NHDTC123JT. Verify pinout compatibility and thermal characteristics when substituting.