NHDTA123JTR

NHDTA123JTR

$0.17
  • Description:TRANS PREBIAS PNP 80V TO236AB
  • Series:-

SKU:00a76f754101 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 80V TO236AB
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Resistor - Base (R1):2.2 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:100mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):100nA
  • Frequency - Transition:150 MHz
  • Power - Max:250 mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:TO-236AB

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NHDTA123JTR

Overview

The NHDTA123JTR is a PNP Resistor-Equipped Transistor (RET) from Nexperia, housed in an SOT-23 surface-mount package. It integrates a PNP transistor with built-in bias resistors R1 (2.2 kΩ typical) and R2 (47 kΩ typical). Key electrical parameters include a collector-emitter voltage (VCEO) of -80 V, a continuous output current (IO) of -100 mA, and a DC current gain (hFE) minimum of 100 at IC = -10 mA. The device features a transition frequency (fT) of 150 MHz and operates within a junction temperature range of -55 °C to 150 °C.

Feature Summary

  • Integrates PNP transistor with built-in bias resistors to simplify circuit design
  • Provides high breakdown voltage capability for robust operation
  • Reduces component count and pick-and-place costs in assembly

Applications

  • Digital applications
  • Controlling IC inputs
  • Switching loads

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to confirm packaging format and reel specifications. Confirm that the product status aligns with project requirements, as data sheet revisions may indicate changes in qualification or availability. Ensure compatibility with intended manufacturing processes before finalizing procurement orders.

Selection Notes

Select this component when a PNP switching solution with integrated base biasing is required to minimize external components. Verify that the -80 V collector-emitter voltage rating exceeds the maximum operating voltage in the target circuit. Check that the -100 mA output current capability meets the load requirements and that the SOT-23 package fits the available PCB footprint constraints.

Part Context

The NHDTA123JT belongs to the Nexperia PNP Resistor-Equipped Transistor family, which also includes variants like NHDTA143ZT and NHDTA114YT with different resistor values. These devices are designed as cost-saving alternatives to discrete resistor-transistor combinations in digital logic interfaces. The NHDTC123JT serves as the complementary NPN version within the same series.

Replacement Considerations

Direct functional substitutes within the same series include NHDTA143ZT and NHDTA114JT, though they feature different internal resistor values. For complementary NPN applications, consider the NHDTC123JT. Verify pinout compatibility and thermal characteristics when substituting.

NHDTA123JTRNHDTA123JTR
$0.17
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