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The NHDTA123JTVL is a PNP Resistor-Equipped Transistor (RET) from the Nexperia USA Inc. series, housed in an SOT23 surface-mounted package. It features a collector-emitter voltage of -80 V and an output current capability of -100 mA. The device integrates bias resistors R1 (2.2 kΩ nominal) and R2 (47 kΩ nominal). Key electrical characteristics include a DC current gain (hFE) of at least 100 at -10 mA, a transition frequency (fT) of 150 MHz, and a collector capacitance of 3 pF. Thermal resistance from junction to ambient is 500 K/W in free air.
Verify the specific ordering suffix against official Nexperia documentation to confirm tape-and-reel specifications and manufacturing site codes. Ensure the procurement channel sources directly from authorized distributors or Nexperia sales offices to guarantee product authenticity and traceability for the NHDTA123JTVL variant.
Select this component when a PNP transistor with integrated base biasing is required for digital logic interfacing. The 2.2 kΩ input resistor suits moderate drive currents, while the 47 kΩ pull-up resistor aids in stable off-state conditions. Verify that the -80 V rating meets the system's maximum voltage requirements.
This part belongs to the NHDTA123JT/143ZT/114YT series of PNP RETs. It serves as a cost-saving alternative to discrete transistor-resistor networks in digital circuits. The 'VL' suffix typically denotes a specific reel configuration or manufacturing origin within the standard SOT23 family, sharing identical electrical performance with the base NHDTA123JT model.
Direct substitutes within the same series include NHDTA143ZT and NHDTA114YT, which differ only in internal resistor values. For functional equivalents with different resistor ratios, verify pin compatibility and electrical ratings against the original design constraints.