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The NHDTA123JUF is a PNP Resistor-Equipped Transistor (RET) from Nexperia, housed in an SOT323 (SC-70) surface-mounted package. It features a collector-emitter voltage of -80 V and an output current capability of -100 mA. The device integrates bias resistors with typical values of R1 = 2.2 kΩ and R2 = 47 kΩ, yielding a resistor ratio of 21. Key electrical characteristics include a DC current gain (hFE) minimum of 100 at -10 mA, a transition frequency of 150 MHz, and a total power dissipation of 235 mW. Operating temperatures range from -55 °C to +150 °C.
Verify the specific suffix 'F' against official Nexperia documentation to confirm packaging details such as tape and reel specifications or marking codes. Ensure the selected variant matches the required automotive or non-automotive qualification status, as product data sheets may distinguish between these categories. Cross-reference the ordering information table for accurate procurement part numbers.
Select this component when a compact PNP transistor solution with integrated base and pull-down resistors is required. The SOT323 package suits space-constrained designs. Verify that the 2.2 kΩ input resistance aligns with the driving source impedance. Confirm thermal requirements fit within the 235 mW dissipation limit under expected ambient conditions.
This device belongs to the NHDTA123JU/143ZU/114YU series of PNP resistor-equipped transistors. It serves as a cost-saving alternative to discrete resistor-transistor networks in digital applications. The series shares identical pinouts and general performance metrics, differing primarily in the internal bias resistor values to accommodate various drive requirements.
NHDTC123JU is the NPN complement within the same series. For direct substitution in existing designs, verify that the replacement maintains the same SOT323 footprint and electrical ratings. Check if the target application requires automotive qualification, as standard versions may differ from qualified counterparts.