SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The NHDTA124ETR is a PNP Resistor-Equipped Transistor (RET) from Nexperia, housed in an SOT-23 (TO-236AB) surface-mount package. It integrates two bias resistors with a typical ratio of 1:1. Key electrical parameters include a collector-emitter voltage (VCEO) of -80 V, a continuous output current (IO) of -100 mA, and a total power dissipation (Ptot) of 250 mW at 25 °C. The device features a typical input resistance (R1) of 22 kΩ, a minimum DC current gain (hFE) of 70, and a transition frequency (fT) of 150 MHz. Operating temperatures range from -55 °C to +150 °C.
Verify the specific suffix 'ETR' against the manufacturer's official ordering information to confirm packaging details such as reel size or tape width. Confirm RoHS compliance status through the latest product data sheet revision. Ensure the marking code matches the QD prefix specified for this type number before finalizing procurement specifications.
Select the NHDTA124ETR when a PNP configuration with equal bias resistor values is required. The 22 kΩ internal resistance suits moderate drive currents. Verify that the -80 V collector-emitter rating exceeds the maximum circuit voltage. Consider the SOT-23 footprint constraints and thermal derating curves if operating above 25 °C ambient temperature.
This component belongs to the NHDTA114/124/144ET series of PNP resistor-equipped transistors. It serves as the digital complement to the NHDTC124ET NPN RET. The series shares identical pinouts and package dimensions, differing primarily in internal resistor values and transistor polarity.
The NHDTC124ET is the direct NPN complement within the same family. For generic replacements, verify that substitute PNP RETs match the -80 V VCEO rating, -100 mA IO limit, and SOT-23 package outline to ensure mechanical and electrical compatibility.