NHDTA124ETVL

Overview

The NHDTA124ETVL is a PNP Resistor-Equipped Transistor (RET) from the Nexperia NHDTA114/124/144ET series, housed in an SOT-23 (TO-236AB) surface-mount package. It integrates a PNP transistor with built-in bias resistors (R1 and R2), both typically 22 kΩ, to simplify circuit design. Key electrical parameters include a collector-emitter voltage (VCEO) of -80 V, a continuous output current (IO) of -100 mA, and a transition frequency (fT) of 150 MHz. The device features a DC current gain (hFE) minimum of 70 and operates within an ambient temperature range of -55 °C to +150 °C.

Feature Summary

• Built-in bias resistors reduce component count and simplify circuit layout.
• High breakdown voltage capability suitable for robust switching applications.
• Automotive qualified to AEC-Q101 standards for reliability.
• Small SOT-23 package minimizes board space requirements.

Applications

• Digital logic interface circuits
• Controlling IC inputs
• Switching loads

Procurement Notes

Verify the specific suffix 'VL' against official Nexperia documentation to confirm packaging details, as standard datasheets may list generic reel or cut-tape options without specifying this exact variant. Ensure the ordering code matches the required automotive qualification level and package orientation before finalizing procurement orders.

Selection Notes

Select the NHDTA124ETVL when a PNP RET with approximately 22 kΩ base and emitter resistors is required. This part serves as a direct replacement for discrete resistor-transistor combinations, offering cost savings in pick-and-place operations. Verify that the -80 V rating and -100 mA current capacity meet the specific load requirements of the target application.

Part Context

This component belongs to the NHDTA1xxET family of PNP resistor-equipped transistors. It is the complement to the NHDTC124ET NPN RET. The series shares identical pinouts and general characteristics, differing primarily in the resistance values of the integrated bias resistors, which are 10 kΩ, 22 kΩ, and 47 kΩ for the 114, 124, and 144 types respectively.

Replacement Considerations

NHDTC124ET is the NPN complement within the same series. Discrete BC856 transistors paired with external resistors can be replaced by this unit to save board space, though external resistor values must match the internal 22 kΩ configuration for equivalent performance.

FAQ

What are the typical values for the built-in resistors?

For the NHDTA124ET type, both the input bias resistor (R1) and the emitter bias resistor (R2) have typical values of 22 kΩ.

Is this component qualified for automotive use?

Yes, the NHDTA124ET series is qualified in accordance with the AEC-Q101 standard for stress test qualification of discrete semiconductors.

What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage (VCEO) with an open base is -80 V.