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The NHDTA143ZTR is a PNP Resistor-Equipped Transistor (RET) from Nexperia, housed in an SOT23 surface-mounted package. It features built-in bias resistors: R1 is typically 4.7 kΩ and R2 is 47 kΩ, yielding a typical resistor ratio of 10. The device supports a collector-emitter voltage (VCEO) of -80 V and a continuous output current (IO) of -100 mA. Key electrical characteristics include a minimum DC current gain (hFE) of 100 at IC = -10 mA, a transition frequency (fT) of 150 MHz, and a total power dissipation (Ptot) of 250 mW. Operating temperatures range from -55 °C to +150 °C.
Verify the specific ordering suffix against the manufacturer's current documentation to confirm packaging format and reel specifications. Ensure that the procurement channel sources genuine Nexperia products to guarantee compliance with the published electrical limits and thermal characteristics defined in the official product data sheet.
Select this component when a PNP transistor with integrated base biasing is required for digital switching. The 4.7 kΩ input resistor value determines the drive current requirements. Verify that the application voltage does not exceed the -80 V collector-emitter rating and that the load current remains within the -100 mA limit under all operating conditions.
This part belongs to the NHDTA123JT/143ZT/114YT series of PNP resistor-equipped transistors. It shares the same SOT23 package and core electrical ratings as the NHDTA123JT and NHDTA114YT variants, differing primarily in the internal bias resistor values. The 'Z' marking code identifies this specific resistor configuration on the package surface.
Direct functional substitutes within the same series include NHDTA123JT and NHDTA114YT, provided their respective resistor values align with the circuit design requirements. For automotive applications, verify if the qualified variant NHDTA143ZT-QR is necessary, as standard versions are non-automotive qualified.