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The NHDTC114ETR is an NPN Resistor-Equipped Transistor (RET) from Nexperia, housed in a SOT23 surface-mount package. It integrates bias resistors R1 and R2 with a typical value of 10 kΩ each. Key electrical parameters include a collector-emitter voltage (VCEO) of 80 V, a continuous output current (IO) of 100 mA, and a total power dissipation (Ptot) of 250 mW at ambient temperatures up to 25 °C. The device features a minimum DC current gain (hFE) of 50 and a transition frequency (fT) of 170 MHz. Operating temperature ranges from -55 °C to +150 °C.
Verify the specific suffix 'ETR' against the manufacturer's official ordering information to confirm reel packaging specifications. Ensure the selected part number matches the required non-automotive qualification status as defined in the latest product data sheet revision. Confirm RoHS compliance details directly with the supplier documentation before finalizing procurement orders.
Select this component when a compact NPN transistor solution with integrated base biasing is required. The 10 kΩ resistor ratio suits standard digital interface circuits. Verify that the 80 V collector-emitter voltage rating meets the system's maximum operating voltage requirements. Consider the SOT23 package dimensions for PCB layout constraints.
This component belongs to the NHDTC114/124/144ET series of NPN resistor-equipped transistors. It serves as a cost-saving alternative to discrete transistor-resistor combinations in digital applications. The PNP complement within this family is the NHDTA114ET series. The device is designed for general-purpose switching tasks where space and assembly efficiency are priorities.
Direct functional substitutes within the same series include NHDTC124ETR and NHDTC144ETR, which share the SOT23 package but feature different internal resistor values. For PNP polarity requirements, the NHDTA114ETR is the complementary option. Verify pinout compatibility and thermal characteristics when substituting.