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The NHDTC114ETVL is an NPN Resistor-Equipped Transistor (RET) from the Nexperia NHDTC114/124/144ET series, housed in a SOT23 surface-mounted package. It integrates bias resistors to simplify circuit design. Key electrical parameters include a collector-emitter voltage of 80 V, an output current capability of 100 mA, and a total power dissipation of 250 mW at temperatures up to 25 °C. The device features a typical input resistance (R1) of 10 kΩ with a bias resistor ratio (R2/R1) of 1. It exhibits a transition frequency of 170 MHz and a minimum DC current gain (hFE) of 50.
Verify the specific suffix 'VL' against official Nexperia documentation to confirm packaging details such as reel or cut tape specifications. Ensure the procurement channel sources directly from authorized distributors to guarantee authenticity. Confirm that the non-automotive qualified status aligns with the intended application requirements before finalizing orders.
Select this component when a compact NPN switching solution with integrated base biasing is required. The 10 kΩ internal resistor configuration suits standard logic interface applications. Consider the SOT23 package dimensions for space-constrained PCB layouts. Verify thermal derating curves if operating above 25 °C ambient temperature to ensure power dissipation limits are not exceeded.
This part belongs to the NHDTC114/124/144ET series of NPN Resistor-Equipped Transistors. The '114' designation specifically indicates the 10 kΩ / 10 kΩ resistor ratio. The 'VL' suffix denotes the specific packaging variant, distinct from the bare die or other tape options. It serves as a cost-saving alternative to discrete transistor and resistor combinations.
The NHDTA114ET is the documented PNP complement within the same series. For direct functional substitution in complementary circuits, verify pinout compatibility and polarity differences. Other RET families may require re-evaluation of bias resistor values.