NHDTC114ETVL

NHDTC114ETVL

$0.16
  • Description:TRANS PREBIAS NPN 80V TO236AB
  • Series:-

SKU:35b5705895b0 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 80V TO236AB
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:100mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):100nA
  • Frequency - Transition:170 MHz
  • Power - Max:250 mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:TO-236AB

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NHDTC114ETVL

Overview

The NHDTC114ETVL is an NPN Resistor-Equipped Transistor (RET) from the Nexperia NHDTC114/124/144ET series, housed in a SOT23 surface-mounted package. It integrates bias resistors to simplify circuit design. Key electrical parameters include a collector-emitter voltage of 80 V, an output current capability of 100 mA, and a total power dissipation of 250 mW at temperatures up to 25 °C. The device features a typical input resistance (R1) of 10 kΩ with a bias resistor ratio (R2/R1) of 1. It exhibits a transition frequency of 170 MHz and a minimum DC current gain (hFE) of 50.

Feature Summary

  • Integrates built-in bias resistors to eliminate external components
  • Provides high breakdown voltage for robust operation
  • Reduces component count and pick-and-place costs

Applications

  • Digital applications
  • Controlling IC inputs
  • Switching loads

Procurement Notes

Verify the specific suffix 'VL' against official Nexperia documentation to confirm packaging details such as reel or cut tape specifications. Ensure the procurement channel sources directly from authorized distributors to guarantee authenticity. Confirm that the non-automotive qualified status aligns with the intended application requirements before finalizing orders.

Selection Notes

Select this component when a compact NPN switching solution with integrated base biasing is required. The 10 kΩ internal resistor configuration suits standard logic interface applications. Consider the SOT23 package dimensions for space-constrained PCB layouts. Verify thermal derating curves if operating above 25 °C ambient temperature to ensure power dissipation limits are not exceeded.

Part Context

This part belongs to the NHDTC114/124/144ET series of NPN Resistor-Equipped Transistors. The '114' designation specifically indicates the 10 kΩ / 10 kΩ resistor ratio. The 'VL' suffix denotes the specific packaging variant, distinct from the bare die or other tape options. It serves as a cost-saving alternative to discrete transistor and resistor combinations.

Replacement Considerations

The NHDTA114ET is the documented PNP complement within the same series. For direct functional substitution in complementary circuits, verify pinout compatibility and polarity differences. Other RET families may require re-evaluation of bias resistor values.

NHDTC114ETVLNHDTC114ETVL
$0.16
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