NHDTC114EUF

NHDTC114EUF

$0.18
  • Description:TRANS PREBIAS NPN 80V SOT323
  • Series:-

SKU:61c6282d1eff Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 80V SOT323
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:100mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):100nA
  • Frequency - Transition:170 MHz
  • Power - Max:235 mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SOT-323

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NHDTC114EUF

Overview

The NHDTC114EUF is an NPN Resistor-Equipped Transistor (RET) from the Nexperia NHDTC114/124/144EU series, housed in a SOT323 (SC-70) surface-mounted package. It features built-in bias resistors with typical values of 10 kΩ for both R1 and R2. Key electrical parameters include a collector-emitter voltage (VCEO) of 80 V, a continuous output current (IO) of 100 mA, and a transition frequency (fT) of 170 MHz. The device has a maximum power dissipation of 235 mW at ambient temperatures up to 25 °C, operating within a temperature range of -55 °C to +150 °C.

Feature Summary

  • Integrates built-in bias resistors to simplify circuit design and reduce component count.
  • Provides high breakdown voltage capability suitable for various digital switching applications.
  • Offers 100 mA output current capability for driving loads or controlling IC inputs.

Applications

  • Digital logic applications
  • Controlling IC inputs
  • Switching loads

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to confirm packaging details and availability status. Ensure that the selected variant matches the required automotive or non-automotive qualification standards, as product status may vary by revision. Confirm compliance with relevant environmental directives such as RoHS before finalizing procurement specifications.

Selection Notes

Select this component when a compact NPN transistor with integrated base and emitter resistors is required. The 10 kΩ resistor ratio simplifies biasing networks compared to discrete solutions. Consider the SOT323 package dimensions for space-constrained PCB layouts. Verify thermal requirements against the specified power dissipation limits under expected operating conditions.

Part Context

This part belongs to the NHDTC114/124/144EU series, which shares the same SOT323 package but varies in internal resistor values. The NHDTC114EU specifically utilizes 10 kΩ resistors, distinguishing it from the 22 kΩ and 47 kΩ variants within the same family. The 'F' suffix typically denotes a specific tape and reel packaging configuration used for automated assembly processes.

Replacement Considerations

The NHDTA114EU serves as the PNP complement within the same series. For direct pin-compatible replacements with identical electrical characteristics, verify equivalent RET devices from other manufacturers that match the 80 V rating, 100 mA current, and 10 kΩ resistor values in a SOT323 package.

FAQ

What are the typical values for the built-in resistors R1 and R2?

For the NHDTC114EU, both the input bias resistor (R1) and the emitter-base resistor (R2) have typical values of 10 kΩ.

Is the NHDTC114EUF automotive qualified?

According to the Rev. 3 data sheet released in August 2026, the NHDTC114EU is not automotive qualified. Automotive-grade alternatives are available in the -Q series.

What is the maximum collector-emitter voltage for this device?

The maximum collector-emitter voltage (VCEO) is rated at 80 V.

NHDTC114EUFNHDTC114EUF
$0.18
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