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The NHDTC114YT-QR is an NPN Resistor-Equipped Transistor (RET) manufactured by Nexperia. It integrates a single NPN bipolar junction transistor with built-in biasing resistors in a compact SOT-23 surface-mount package. The device features a collector-emitter breakdown voltage of 80 V and an emitter-base voltage rating of 10 V. It supports a maximum continuous collector current of 100 mA with a power dissipation capacity of 250 mW. The component operates within a temperature range of -55 °C to +150 °C and is supplied in reel, cut tape, or MouseReel formats.
Verify the specific suffix 'QR' against the official Nexperia datasheet to confirm packaging details and compliance status. Ensure the source document explicitly lists NHDTC114YT-QR as the active part number. Cross-reference the 12NC code 934669007215 for accurate ordering information. Confirm RoHS and halogen-free declarations match project requirements before procurement.
Select this component when space constraints require integrated biasing resistors with an NPN switch. The 80 V rating suits general-purpose digital applications. Compare the 250 mW power dissipation against thermal requirements. Verify that the SOT-23 package dimensions fit the PCB layout. Consider the -55 °C to +150 °C operating range for environmental suitability.
This part belongs to the NHDTC series of Resistor-Equipped Transistors from Nexperia. These devices are designed to replace multiple discrete components, reducing board space and assembly costs. The series includes various resistance values and complementary PNP types like the NHDTA114YT. The NHDTC114YT variant specifically pairs 10 kΩ and 47 kΩ resistors with the transistor.
Publicly confirmed substitutes include the NHDTC114YUX in the SOT-323 package. Designers must verify pin compatibility and electrical parameters when substituting between SOT-23 and SOT-323 packages. Check for any differences in thermal characteristics or resistance tolerances.