SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The NHDTC114YTR is an NPN Resistor-Equipped Transistor (RET) from Nexperia, housed in a SOT23 (TO-236AB) surface-mount package. It integrates bias resistors R1 and R2 with a transistor rated for 80 V collector-emitter voltage and 100 mA output current. The typical input resistance R1 is 10 kΩ, while the typical resistor ratio R2/R1 is 21. Key electrical parameters include a DC current gain (hFE) minimum of 100 at 10 mA, a transition frequency of 170 MHz, and a total power dissipation of 250 mW. The device operates within a temperature range of -55 °C to +150 °C.
Verify the specific suffix 'YTR' against the manufacturer's latest ordering information to confirm reel specifications and tape-and-reel dimensions. Ensure that the component marking code aligns with the required identification standards for your assembly process. Cross-reference the RoHS status and environmental compliance data provided in the official datasheet before finalizing procurement orders.
Select this component when a compact NPN solution with integrated base and emitter resistors is required. The 10 kΩ input resistance suits standard logic interface applications. Verify that the 80 V rating and 100 mA current capacity meet the load requirements. Consider the SOT23 package constraints for thermal management and PCB space availability during the design phase.
This part belongs to the NHDTC123JT/143ZT/114YT series of NPN resistor-equipped transistors. It serves as the complement to the PNP NHDTA114YT. The series shares common features such as high breakdown voltage and simplified design through built-in resistors, offering a cost-effective alternative to discrete resistor-transistor combinations in digital switching circuits.
NHDTC114YT is the non-tape variant of the same device. For pin-compatible alternatives, consult the manufacturer's cross-reference guide for other RET families.