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The NHDTC123JT-QR is an NPN Resistor-Equipped Transistor (RET) from Nexperia, housed in a SOT-23 (TO-236AB) surface-mount package. It integrates a single NPN bipolar junction transistor with built-in biasing resistors: R1 = 2.2 kΩ and R2 = 47 kΩ. Key electrical specifications include a collector-emitter breakdown voltage (VCEO) of 80 V, an emitter-base voltage (VEBO) of 10 V, and a continuous collector current (Ic) of 100 mA. The device supports a power dissipation (Pd) of 250 mW, operates within a temperature range of -55°C to +150°C, and features a transition frequency of 170 MHz.
Verify the suffix 'QR' against official Nexperia documentation to confirm reel specifications and tape-and-reel dimensions. Ensure compatibility with existing PCB footprints for the SOT-23 package. Confirm AEC-Q101 qualification status if required for automotive-grade designs. Cross-reference part numbers with authorized distributors to avoid counterfeit components.
Select this component when space-constrained designs require integrated biasing for NPN switching. Compare R1 and R2 values against other RET variants like NHDTC143ZT or NHDTC114YT if different gain characteristics are needed. Verify thermal management requirements given the 250 mW power dissipation limit in small packages.
This part belongs to Nexperia's NHDTC123 family of resistor-equipped transistors. It serves as the NPN counterpart to the PNP NHDTA123JT. The 'JT' indicates the SOT-23 package, while 'QR' typically denotes specific packaging or ordering options defined by the manufacturer.
Direct substitutes include NHDTC123JTR and NHDTC123JTVL from Nexperia, which share identical electrical parameters and pinouts. Other compatible RETs with similar R1/R2 values should be verified for package compatibility and voltage ratings.