SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The NHDTC123JUF is an NPN Resistor-Equipped Transistor (RET) from Nexperia, housed in a SOT323 (SC-70) surface-mounted package. It integrates bias resistors to simplify circuit design and reduce component count. Key electrical parameters include a collector-emitter voltage (VCEO) of 80 V and an output current capability of 100 mA. The built-in input resistor R1 is nominally 2.2 kΩ, while the base resistor R2 is 47 kΩ. The device features a DC current gain (hFE) of at least 100 at IC = 10 mA and a transition frequency (fT) typical of 170 MHz. Thermal resistance from junction to ambient is 532 K/W on single-sided FR4 PCBs.
Verify the specific suffix 'F' against official Nexperia documentation, as the provided datasheet lists 'NHDTC123JU' without this suffix. Confirm if the suffix denotes a specific tape-and-reel packaging variant or marking code change. Ensure the part meets non-automotive qualification standards as specified in the product data sheet revision history.
Select this component when a compact NPN switch with integrated base biasing is required. The 2.2 kΩ input resistor suits applications needing moderate drive currents. Verify that the 80 V collector-emitter voltage rating exceeds the maximum operating voltage of the target circuit. Consider the SOT323 package size constraints during PCB layout.
This device belongs to the NHDTC1xx series of NPN RETs from Nexperia. It serves as a cost-saving alternative to discrete transistor and resistor combinations. The PNP complement for this series is the NHDTA123JU. The series is designed for general-purpose digital applications where space and bill-of-materials reduction are priorities.
Publicly confirmed substitute part numbers are not available in the provided source material. Designers should consult Nexperia's official cross-reference tools or contact local sales offices for verified equivalent components.