NHDTC124ET-QR

Overview

The NHDTC124ET-QR is an NPN digital transistor from Nexperia, housed in a surface-mount SOT-23 (TO-236AB) package. It integrates a single NPN bipolar junction transistor with internal biasing resistors to simplify circuit design. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 80 V and an emitter-base voltage (VEBO) of 10 V. The device supports a continuous collector current of 100 mA with a power dissipation rating of 250 mW. It operates within a temperature range of -55°C to +150°C and holds AEC-Q101 qualification for automotive reliability.

Feature Summary

• Integrates an NPN transistor with built-in biasing resistors to reduce component count and board space.
• Qualified for automotive applications under the AEC-Q101 standard for enhanced reliability.
• Designed for high-temperature operation with a maximum junction temperature of 150°C.

Applications

• Automotive logic level shifting and switching circuits
• General-purpose digital switching in consumer electronics
• Interface circuits requiring compact pre-biased transistor solutions

Procurement Notes

Verify the specific suffix 'QR' against official Nexperia documentation to confirm reel packaging details and tape dimensions. Ensure the procurement channel provides valid traceability records for AEC-Q101 qualified components. Cross-reference the manufacturer part number with authorized distributor databases to confirm current production status and avoid obsolete stock.

Selection Notes

Select this component when an NPN configuration with 80 V breakdown voltage is required in a small SOT-23 footprint. Compare internal resistor values if precise base drive characteristics are critical for the application. Consider thermal management requirements given the 250 mW power dissipation limit in the compact package.

Part Context

This part belongs to Nexperia's NHDTC series of Resistor-Equipped Transistors (RETs). The 'Q' suffix indicates automotive qualification, while 'ET' specifies the SOT-23 package type. It serves as a discrete alternative to integrated logic drivers in space-constrained designs.

Replacement Considerations

Direct pin-compatible substitutes within the same family include PDTC124ET-QR (PNP version) or NHDTC123JT-QR (different resistor ratio). Verify that any replacement maintains the required 80 V VCEO rating and AEC-Q101 qualification status.

FAQ

What is the DC current gain (hFE) minimum for the NHDTC124ET-QR?

Official datasheets for the NHDTC124ET-QR specify a minimum DC current gain (hFE) of 60 at Ic=5mA and Vce=5V.

Does the NHDTC124ET-QR include internal pull-up or pull-down resistors?

Yes, it includes two internal resistors: a base resistor (R1) and an emitter resistor (R2), configured for NPN operation.

What is the saturation voltage (Vce sat) for this device?

The maximum collector-emitter saturation voltage is typically specified at low currents, such as 150mV at Ib=500µA and Ic=10mA for similar RET devices, though exact values depend on the specific NHDTC124ET-QR datasheet revision.