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The NHDTC124ETR is an NPN Resistor-Equipped Transistor (RET) from Nexperia, housed in a SOT23 surface-mounted package. It integrates bias resistors R1 and R2, both with a typical value of 22 kΩ. Key electrical parameters include a collector-emitter voltage (VCEO) of 80 V, a continuous output current (IO) of 100 mA, and a total power dissipation (Ptot) of 250 mW at temperatures up to 25 °C. The device features a minimum DC current gain (hFE) of 70 at 10 mA and a transition frequency (fT) of 170 MHz. Operating temperature ranges from -55 °C to +150 °C.
Verify the specific ordering suffix against the manufacturer's current catalog to confirm packaging details such as reel or cut tape configuration. Confirm that the non-automotive qualified status aligns with the target application requirements, as automotive versions may require distinct part numbers. Ensure compliance with RoHS directives and check for any recent product change notices affecting specifications or manufacturing sites.
Select this component when a single NPN transistor with integrated base and emitter resistors is required to drive logic inputs or switch low-power loads. The 22 kΩ resistor values are suitable for standard TTL and CMOS interface levels. Consider the thermal resistance characteristics if operating in environments with limited PCB copper area or elevated ambient temperatures.
This part belongs to the NHDTC114/124/144ET series of NPN resistor-equipped transistors. It serves as the complement to the PNHDTA124ET. The series offers various resistor combinations (10 kΩ, 22 kΩ, 47 kΩ) within the same SOT23 footprint to provide design flexibility for different input impedance requirements.
Direct substitutes include other NPN RETs with similar 80 V rating, 100 mA current, and 22 kΩ internal resistors in SOT23 packages. Verify pinout compatibility and thermal performance before substitution.