NILMS4501NR2

Single FETs, MOSFETs Overview

The NILMS4501NR2 is an N-Channel Power MOSFET with an integrated Current Mirror FET, manufactured by onsemi. It features a 24 V drain-source voltage rating and supports a continuous drain current of 9.5 A at ambient temperature. The device utilizes a surface-mount 4-PLLP package (6.2x5.2 mm) designed for efficient thermal management. Key electrical characteristics include ESD protection capabilities and a precise 1:250 current mirror ratio between the main power FET and the auxiliary mirror FET.

Single FETs, MOSFETs Feature Summary

• Integrates a primary power MOSFET with a secondary current mirror FET for accurate current sensing applications
• Provides electrostatic discharge (ESD) protection to enhance component reliability in sensitive circuits
• Utilizes a compact 4-PLLP surface-mount package to optimize board space and thermal performance

Single FETs, MOSFETs Applications

• Current sensing in battery management systems
• Protection circuits requiring precise current monitoring
• Low-voltage DC-DC converter control loops

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'R2' corresponds to the tape and reel packaging configuration required for your assembly line. Confirm that the 4-PLLP footprint matches your PCB design guidelines. Ensure compatibility with the 24 V system voltage and 9.5 A current requirements before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a single solution is needed for both power switching and proportional current mirroring. The 1:250 ratio allows for low-power sensing of high-current loads without external shunt resistors. Consider the 4-PLLP package size if space constraints are critical. Verify that the 24 V rating meets the maximum operating voltage of the target application circuit.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's intelligent power discrete family, specifically designed for applications requiring integrated current monitoring. It combines standard N-Channel MOSFET functionality with a dedicated mirror output, simplifying designs for battery protection and load management where traditional shunt-based sensing would consume excessive board area or introduce additional loss.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical ratings carefully if considering alternative manufacturers. No direct cross-reference data is documented for this specific model.