NJVTIP31CG

$0.26

Description：BIP TO-220 NPN 3A 100V
Series：*

SKU:eed7d02e6d3f Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

NJVTIP31CG is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is BIP TO-220 NPN 3A 100V. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for NJVTIP31CG

Description：BIP TO-220 NPN 3A 100V
Series：*
Mfr：onsemi
Package：Bulk
Transistor Type：-
Current - Collector (Ic) (Max)：-
Voltage - Collector Emitter Breakdown (Max)：-
Vce Saturation (Max) @ Ib, Ic：-
Current - Collector Cutoff (Max)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：-
Power - Max：-
Frequency - Transition：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for NJVTIP31CG

NJVTIP31CG

Single Bipolar Transistors Overview

The NJVTIP31CG is a silicon NPN power transistor manufactured by onsemi, belonging to the TIP31C series. It features a single configuration housed in a TO-220-3 through-hole package. Key electrical specifications include a maximum DC collector current of 3 A and a collector-emitter breakdown voltage (VCEO) of 100 V. The device supports a power dissipation of 40 W and operates within a temperature range of -65°C to +150°C. Additional parameters include a gain-bandwidth product (fT) of 3 MHz, a collector-base voltage (VCBO) of 100 V, an emitter-base voltage (VEBO) of 5 V, and a collector-emitter saturation voltage of 1.2 V.

Single Bipolar Transistors Feature Summary

NPN polarity with single element configuration for general-purpose amplification and switching
High power handling capability with 40 W dissipation rating in TO-220-3 package
Robust voltage ratings supporting 100 V collector-emitter and collector-base limits

Single Bipolar Transistors Applications

General purpose amplifier circuits
Electronic switching applications
Power regulation stages requiring high current handling

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer designation when sourcing, as the prefix may vary by distributor or legacy inventory systems. Confirm RoHS compliance status via the official datasheet, as environmental declarations can change. Ensure the TO-220-3 package type matches your thermal management requirements. Cross-reference the part number against the latest onsemi documentation to confirm availability and any potential obsolescence notices.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a 3 A NPN switch with 100 V blocking capability. The TO-220-3 package facilitates heatsinking for high-power dissipation scenarios. Consider the 3 MHz transition frequency for moderate-speed switching applications. Verify that the minimum hFE of 25 meets your base drive requirements. Ensure the operating temperature range aligns with your system's thermal environment.

Single Bipolar Transistors Part Context

The TIP31C series represents a family of silicon NPN power transistors widely used in linear and switching applications. The NJVTIP31CG variant specifically denotes the onsemi manufacturing source within this lineage. These devices are characterized by their robust construction and ability to handle significant power loads, making them suitable for industrial and consumer electronics where reliable high-current switching is required.