NP29N06QUK-E1-AY

FET, MOSFET Arrays Overview

The NP29N06QUK-E1-AY is a dual N-channel power MOSFET manufactured by Renesas Electronics. It features an 8-pin HSON surface-mount package with dimensions of 5x5.4 mm. The device supports a drain-source voltage (Vds) of 60 V and a continuous drain current (Id) of 30 A at case temperature. Key electrical parameters include a maximum on-resistance (Rds(on)) of 21 mΩ at Vgs = 10 V and Id = 15 A, a gate charge (Qg) of 20 nC, and an input capacitance (Ciss) of 1000 pF typical. It operates up to a maximum junction temperature of +175°C and dissipates 44 W at the case.

FET, MOSFET Arrays Feature Summary

• Super low on-state resistance for high efficiency switching
• Low input capacitance for reduced switching losses
• Qualified for automotive applications under AEC-Q101 standards
• Compact 8-pin HSON package design

FET, MOSFET Arrays Applications

• Automotive high-current switching circuits
• Power management modules requiring small form factors
• DC-DC converter output stages

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized Renesas distributors or direct channels. Confirm the specific suffix matches the required automotive grade qualification. Ensure storage conditions adhere to moisture sensitivity level requirements prior to soldering. Request original datasheets and test reports to validate batch consistency and traceability before finalizing orders.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel configuration is required in a compact footprint. The 60V rating suits low-voltage automotive systems. Compare Rds(on) and Qg values against single-channel alternatives to determine if the dual topology offers board space advantages. Ensure the driving circuit can handle the specified gate threshold and charge requirements for optimal switching performance.

FET, MOSFET Arrays Part Context

This part belongs to the NP29 series of dual N-channel MOSFETs from Renesas. It shares the same package and general architecture with variants like NP29N04QUK-E1-AY, which offers a lower 40V rating but similar current handling. The series is designed specifically for automotive reliability standards.

FET, MOSFET Arrays Replacement Considerations

Direct functional substitutes within the same package and specification range are limited in public documentation. Verify pin compatibility and thermal characteristics if considering cross-brand alternatives. No officially confirmed substitute part numbers are listed in available sources.