NSB9435T1G

NSB9435T1G

$0.81
  • Description:TRANS PREBIAS PNP 30V 3A SOT223
  • Series:-

SKU:cc5409cc21a2 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 30V 3A SOT223
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 Only
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):3:00 AM
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:125 @ 800mA, 1V
  • Vce Saturation (Max) @ Ib, Ic:550mV @ 300mA, 3A
  • Current - Collector Cutoff (Max):-
  • Frequency - Transition:110 MHz
  • Power - Max:720 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-261-4, TO-261AA
  • Supplier Device Package:SOT-223 (TO-261)

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NSB9435T1G

Overview

The NSB9435T1G is a single PNP digital transistor manufactured by onsemi, designed to replace discrete biasing networks. It integrates a bipolar junction transistor with an internal base resistor of 10 kOhms within a surface-mount SOT-223-4 package. The device supports a maximum collector-emitter voltage (VCEO) of 30 V and handles continuous and peak DC collector currents up to 3 A. It features a minimum DC current gain (hFE) of 125 and operates reliably across a temperature range from -55°C to +150°C.

Feature Summary

  • Integrates a PNP transistor with a built-in 10 kOhm base resistor to simplify circuit design.
  • High current handling capability with a 3 A continuous collector current rating.
  • Robust thermal performance allowing operation at junction temperatures up to 150°C.

Applications

  • General-purpose switching applications requiring high current drive.
  • Replacement for discrete resistor-transistor biasing networks in logic circuits.
  • Power management circuits utilizing low-side or high-side switching configurations.

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the specific suffix 'T1G' matches the required RoHS-compliant packaging format. Check for End-of-Life status as indicated by some sources, ensuring long-term supply availability aligns with product lifecycle requirements before finalizing procurement plans.

Selection Notes

Select this component when a single PNP digital transistor with integrated biasing is preferred over discrete components. Ensure the 30 V voltage rating and 3 A current capacity meet the load requirements. Verify that the SOT-223-4 package dimensions fit the PCB layout constraints and that the thermal dissipation capabilities are sufficient for the intended operating environment.

Part Context

This part belongs to the NSB9435 series of pre-biased transistors from onsemi. It serves as a compact alternative to separate resistors and BJTs, reducing board space and assembly complexity. The series typically includes complementary NPN variants and different resistance values to suit various logic interface needs.

Replacement Considerations

NSV9435T1G is an automotive-grade variant within the same family. Verify if AEC-Q101 qualification is required; otherwise, electrical characteristics remain comparable. No other direct cross-model substitutes are confirmed in public documentation.

NSB9435T1GNSB9435T1G
$0.81
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