SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The NSBA113EF3T5G is a dual NPN Bias Resistor Transistor (BRT) manufactured by onsemi. It integrates two NPN transistors with monolithic bias resistor networks into a single SOT-1123 surface-mount package. The device incorporates a series base resistor and a base-emitter resistor for each transistor, designed to replace discrete components and external biasing networks. This integration simplifies circuit design while reducing board space and component count. The unit operates within standard temperature ranges suitable for general-purpose switching applications.
Verify the specific suffix EF3 against official manufacturer documentation to confirm pinout configuration and resistor values. Ensure the ordering part number matches the required package type and tape-and-reel specifications. Confirm availability status as product lifecycles may change without notice.
Select this component when a compact solution for dual NPN switching is required. Verify that the integrated resistor values meet the specific base drive requirements of the target application. Compare electrical characteristics against existing discrete designs to ensure compatibility with system voltage and current limits.
This component belongs to the NSBA series of Bias Resistor Transistors from onsemi. These devices are engineered to consolidate multiple discrete semiconductor elements into a unified package. The series provides standardized solutions for common biasing configurations used in digital logic and signal processing circuits.
Consult official cross-reference data for verified substitute part numbers. Ensure any replacement maintains identical pinout assignments and electrical parameters to guarantee functional compatibility in existing designs.