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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V SOT1123
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Tape & Reel (TR),Bulk
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：35 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：254 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-1123
- Supplier Device Package：SOT-1123
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Overview
The NSBA114EF3T5G is a PNP Bias Resistor Transistor (BRT) from onsemi, packaged in SOT-1123. It integrates a single transistor with a monolithic bias network consisting of a series base resistor and a base-emitter resistor. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 Vdc, continuous collector current of 100 mAdc, and typical input resistors R1=10 kΩ and R2=10 kΩ. The device operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Integrates a single PNP transistor with a monolithic bias network containing two resistors.
- Eliminates the need for external discrete biasing components.
- Designed to replace individual devices and their associated external resistor networks.
Applications
- Circuit design simplification by reducing component count.
- Applications requiring reduced board space.
- Automotive and other applications requiring unique site and control change requirements.
Procurement Notes
Verify the specific ordering suffix and package type against the manufacturer's official documentation before procurement. Confirm that the component meets all required environmental standards and compliance specifications for the intended application environment.
Selection Notes
Select this component when a compact PNP digital transistor solution is needed. Ensure the required voltage and current ratings align with the circuit design. Verify compatibility with the SOT-1123 footprint and pin configuration during the schematic capture phase.
Part Context
This part belongs to the DTA114E/D series of digital transistors. It shares functional similarities with other parts in the family but differs in packaging and specific marking. The SOT-1123 package offers a small form factor suitable for space-constrained designs.
Replacement Considerations
Publicly confirmed substitute part numbers include MUN2111, MMUN2111L, MUN5111, DTA114EE, and DTA114EM3. Verify pinout and thermal characteristics when substituting.
FAQ
What is the typical value of the internal base resistors?
The typical values are R1 = 10 kΩ and R2 = 10 kΩ.
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter voltage (VCEO) is 50 Vdc.
Is this component suitable for automotive applications?
Yes, devices with the S and NSV prefix are AEC-Q101 qualified and PPAP capable for automotive applications.
