NSBA114EMXWTBG

NSBA114EMXWTBG

  • Description:BIAS RESISTOR TRANSISTORS (BRT)
  • Series:NSBAMXW

SKU:2afbecd09e34 Category: Brand:

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Product Detailed Parameters

  • Description:BIAS RESISTOR TRANSISTORS (BRT)
  • Series:NSBAMXW
  • Mfr:onsemi
  • Package:Bulk
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:450 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount, Wettable Flank
  • Package / Case:3-XFDFN
  • Supplier Device Package:3-XDFNW (1x1)

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NSBA114EMXWTBG

Overview

The NSBA114EMXWTBG is a single PNP digital transistor from the onsemi NSBAMXW series, housed in an XDFNW3 (DFN-3) surface-mount package. It features a typical input resistance of 10 kOhms and a resistor ratio of 1. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Minimum DC current gain (hFE) is specified as 80 at -5 mA and -10 V. Power dissipation reaches 450 mW, with an operating temperature range spanning from -65 °C to +150 °C.

Feature Summary

  • Integrates built-in bias resistors to simplify circuit design and reduce component count.
  • Utilizes compact XDFNW3 packaging for high-density board space efficiency.
  • Provides robust thermal performance with a wide operating temperature range up to 150 °C.

Applications

  • General-purpose switching applications requiring integrated biasing.
  • Low-voltage logic interface circuits.
  • Power management control stages.

Procurement Notes

Verify the specific ordering suffix MXWTBG against official manufacturer documentation to confirm the exact reel or cut-tape configuration. Ensure that the selected variant matches the required packaging format for automated assembly processes. Cross-reference the RoHS compliance status directly with the latest datasheet to meet environmental regulations.

Selection Notes

Select this component when a single PNP digital transistor with a 10 kOhm input resistor is required. The XDFNW3 package is suitable for applications prioritizing minimal footprint. Confirm that the 50 V voltage rating and 100 mA current capacity align with the target circuit's electrical demands and thermal constraints.

Part Context

This part belongs to the NSBAMXW series of digital transistors designed for efficient signal switching. The series emphasizes integration by combining bipolar junction transistors with internal bias networks. The XDFNW3 package represents a modern, low-profile solution intended for advanced consumer and industrial electronics requiring reliable performance in constrained spaces.

Replacement Considerations

Consult official substitution guides for compatible parts within the same family. Verify pinout compatibility and electrical specifications before replacing components in existing designs.

NSBA114EMXWTBGNSBA114EMXWTBG

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