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The NSBA114TF3T5G is a single PNP pre-biased transistor manufactured by onsemi, housed in an SOT-1123 surface-mount package. It integrates a base resistor to simplify biasing network design. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. The device features a typical input resistance of 10 kOhms and a minimum DC current gain (hFE) of 80. Power dissipation is rated at 254 mW, with an operating temperature range spanning from -55°C to +150°C.
Verify the specific suffix TF3 against official datasheets to confirm pinout and electrical tolerances. Confirm RoHS compliance status through manufacturer declarations. Check for obsolescence notices or lifecycle changes prior to finalizing procurement plans. Ensure component authenticity through authorized distribution channels only.
Select this component when a single PNP configuration with integrated biasing is required. Compare the 10 kOhm base resistance value against circuit requirements. Verify that the 50 V voltage rating exceeds the maximum expected load voltage. Consider the SOT-1123 footprint constraints during PCB layout planning.
This part belongs to the NSBA series of pre-biased transistors from onsemi. These devices consolidate multiple discrete components into a single package. The series offers various resistance values and configurations to accommodate different logic families and switching speeds.
Cross-reference with equivalent parts such as DTA114E or MMUN2116LT1G. Verify compatibility regarding pin assignments, thermal characteristics, and electrical parameters before substitution.