SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The NSBA114YF3T5G is a PNP Bias Resistor Transistor (BRT) from onsemi, integrating a single transistor with a monolithic bias network consisting of a series base resistor and a base-emitter resistor. It operates within a collector-emitter voltage range of 50 Vdc and supports continuous collector currents up to 100 mAdc. The device features an input resistor (R1) of 10 kOhms and a resistor ratio (R1/R2) of 0.21 typical. Packaged in the SOT-1123 form factor, it offers a total device dissipation of 254 mW at 25°C and functions across a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix T5G to confirm the tape and reel packaging configuration. Confirm that the device code marking matches the datasheet specifications for the SOT-1123 package. Ensure compliance with RoHS standards and lead-free requirements as stated in the manufacturer documentation before finalizing procurement orders.
Select this component when a compact PNP digital transistor solution is required for low-power switching tasks. The integrated 10 kOhm base resistor simplifies drive circuit calculations. Consider the thermal derating characteristics provided in the datasheet when designing for high ambient temperatures or limited copper trace areas on the PCB.
This part belongs to the DTA114Y/D family of digital transistors, which includes variants like MUN2114 and DTA114YM3. These devices share similar electrical characteristics but differ in packaging styles such as SC-59, SOT-23, and SOT-723. The NSBA114YF3 specifically utilizes the SOT-1123 package for space-constrained designs.
Direct pin-compatible replacements within the same family include DTA114YM3T5G and MUN2114T1G, though package differences must be accounted for. Verify that any substitute maintains the same PNP polarity, 50V rating, and 10k Ohm base resistance to ensure circuit compatibility.