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The NSBA115TF3T5G is a digital transistor manufactured by onsemi, belonging to the NSBA115TF3 series. It is a pre-biased NPN transistor housed in an SOT-1123 surface-mount package. The device integrates internal bias resistors to simplify circuit design. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (Ic) of 100 mA. The typical input resistance is 47 kOhms with a resistor ratio of 1:1. Power dissipation is rated at 254 mW, and it operates within a temperature range of -55°C to +150°C.
Verify component authenticity through authorized onsemi distributors or certified suppliers. Check RoHS compliance status via official datasheets or material declarations. Confirm package integrity and lead condition upon receipt. Ensure storage conditions adhere to moisture sensitivity level requirements to prevent soldering defects during assembly.
Select this component when a compact NPN digital transistor with integrated biasing is required. Verify that the 50 V voltage rating and 100 mA current capacity meet circuit demands. Consider the SOT-1123 footprint constraints and thermal dissipation capabilities relative to the application environment. Compare internal resistor values against specific logic drive requirements.
This part belongs to the onsemi NSBA series of digital transistors, which are designed to replace discrete resistor networks. The NSBA115TF3 variant specifically denotes an NPN configuration with standard biasing ratios. It serves as a cost-effective solution for reducing board space and assembly complexity in consumer and industrial electronics compared to separate transistor-resistor combinations.
Compatible substitutes include MUN2115 and DTA115E from other manufacturers, provided pinouts and electrical parameters match. Verify equivalent VCEO, Ic, and internal resistance values before substitution.