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The NSBA123EF3T5G is a PNP Bias Resistor Transistor (BRT) from onsemi, integrating a single transistor with a monolithic bias network consisting of a series base resistor and a base-emitter resistor. It replaces discrete components to reduce board space and system cost. The device features a collector-emitter voltage (VCEO) of 50 Vdc and continuous collector current of 100 mAdc. Electrical characteristics include an input resistor (R1) typical value of 2.2 kOhms with a ratio R1/R2 of 1.0. Thermal dissipation is rated at 254 mW at 25°C in the SOT-1123 package.
Verify the specific ordering suffix T5G corresponds to the tape and reel packaging configuration containing 8000 units per reel. Confirm that the NSBA prefix indicates compliance with unique site and control change requirements suitable for automotive or specialized applications. Ensure the final assembly marking matches the datasheet diagram for the SOT-1123 package style.
Select this component when a PNP digital transistor with a 2.2 kOhm base resistor is required. Verify that the 50 V collector-emitter voltage rating meets the circuit's maximum operating conditions. Consider the SOT-1123 package dimensions for footprint compatibility. Check thermal derating curves if operation exceeds standard ambient temperature limits.
This part belongs to the NSBA123EF3 series within onsemi's digital transistor portfolio. It shares electrical specifications with other devices in the DTA123E family but utilizes distinct packaging and manufacturing prefixes. The NSBA designation specifically denotes adherence to automotive quality standards and controlled production sites.
Direct functional equivalents include DTA123EE and MUN2131 variants, provided the package type and pinout are compatible. Verify that substitute parts maintain the same resistor ratio and breakdown voltage ratings to ensure circuit performance consistency.