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The NSBA123TF3T5G is a PNP digital transistor manufactured by onsemi, housed in an SOT-1123 surface-mount package. It integrates a single PNP transistor with internal biasing resistors to simplify circuit design and reduce component count. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. With a power dissipation rating of 254 mW, it operates within a temperature range of -65°C to +150°C. The typical input resistance is 47 kOhms, and the resistor ratio is 1.
Verify the specific suffix T5G against official onsemi documentation to confirm tape-and-reel packaging specifications and quantity per reel. Ensure compliance with RoHS directives and check for any recent Product Change Notifications that may affect pinout or electrical characteristics before finalizing procurement orders.
Select this component when a PNP configuration with integrated biasing is required in a small footprint. Compare the 47 kOhm input resistance against other series variants like NSBA123EF3T5G if different drive currents are needed. Confirm that the 50V breakdown voltage and 100mA current limits align with the target application's electrical requirements.
This part belongs to the NSBA123TF3 series of pre-biased transistors from onsemi. It shares the SOT-1123 package form factor with other members of the family but differs in internal resistor values and transistor polarity configurations. It serves as a direct replacement for older discrete resistor-transistor combinations in space-constrained designs.
Publicly confirmed substitute part numbers are not available in the provided source material. Engineers should consult onsemi's official cross-reference tools or datasheets for equivalent components from other manufacturers if supply constraints arise.