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Product Detailed Parameters
- Description：BIAS RESISTOR TRANSISTORS (BRT)
- Series：NSBAMXW
- Mfr：onsemi
- Package：Bulk
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：35 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：450 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Package / Case：3-XFDFN
- Supplier Device Package：3-XDFNW (1x1)
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Overview
The NSBA123YMXWTBG is a single PNP digital transistor from the NSBAMXW series, manufactured by onsemi. It features an integrated typical input resistance of 2.2 kOhms and a resistor ratio of 0.22. The device supports surface mount installation in a DFN-3 package. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V, continuous collector current of 100 mA, and power dissipation of 450 mW. The DC collector/base gain (hFE) minimum is 35 at -5 mA and -10 V. Operating temperatures range from -65 C to +150 C.
Feature Summary
- Integrated base resistor network simplifies circuit design by reducing component count.
- High thermal stability with extended operating temperature range up to +150 C.
- Compact DFN-3 package suitable for space-constrained surface mount applications.
Applications
- General-purpose switching circuits requiring PNP logic interface.
- Battery-powered devices utilizing low-power digital control.
- Signal level shifting between different voltage domains.
Procurement Notes
Verify the specific ordering suffix against official onsemi documentation to ensure correct packaging configuration. Confirm RoHS compliance status through the manufacturer's certified datasheet rather than distributor summaries. Validate that the DFN-3 footprint matches your PCB layout requirements before finalizing procurement orders.
Selection Notes
Select this component when a PNP digital transistor with 50 V rating and 100 mA current capacity is required. Ensure the 2.2 kOhm input resistance aligns with your drive source impedance. Consider the DFN-3 package dimensions for thermal management and board space constraints compared to alternative SOT packages.
Part Context
This part belongs to the NSBAMXW series of digital transistors from onsemi. These components integrate bipolar junction transistors with internal bias resistors. The series offers various configurations and resistance values optimized for high-speed switching and logic interfacing applications in consumer and industrial electronics.
Replacement Considerations
Check for direct substitutes within the NSBA123 family or other PNP digital transistors with identical 2.2 kOhm input resistance and 50 V VCEO ratings. Verify pinout compatibility and thermal characteristics before substituting to ensure circuit performance remains unchanged.
