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The NSBA124EF3T5G is a single PNP digital transistor manufactured by onsemi, housed in an SOT-1123 surface-mount package. It features a typical input resistance of 22 kOhms and a typical resistor ratio of 1. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Power dissipation is rated at 254 mW, with a minimum DC collector/base gain (hfe) of 60. Operating temperatures range from -65°C to +150°C.
Verify the specific ordering suffix against official manufacturer documentation to ensure correct packaging and variant selection. Confirm RoHS compliance status through the latest datasheet or material declaration before integration into regulated products. Cross-reference the full part number with authorized distributors to validate authenticity and current production status.
Select this component when a PNP digital transistor with a 50V rating and 100mA current capacity is required. The 22 kOhm input resistance suits standard logic interfaces. Ensure the SOT-1123 package fits the PCB layout constraints and that the thermal management capabilities align with the 254 mW power dissipation limit in the target application environment.
This part belongs to the NSBA124EF3 series of pre-biased transistors from onsemi. It serves as a discrete solution for replacing multiple discrete components, reducing board space and assembly complexity. The series is designed for general-purpose switching and logic inversion tasks in portable and industrial devices.
Consult official substitution guides for compatible equivalents. Verify pinout compatibility and electrical parameter margins before replacing the original component in existing designs.