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The NSBA143EF3T5G is a PNP Bias Resistor Transistor (BRT) from onsemi, integrating a single transistor with a monolithic bias network consisting of a series base resistor and a base-emitter resistor. It operates with a maximum collector current of 100 mA and a collector-emitter voltage of 50 Vdc. The device features an input resistor R1 of 4.7 kOhms and a resistor ratio R1/R2 of 1.0. Packaged in SOT-1123, it offers a total device dissipation of 254 mW at 25°C and supports junction temperatures up to 150°C.
Verify the specific ordering suffix T5G corresponds to the tape and reel packaging configuration with a quantity of 8000 units per reel. Confirm that the device code marking matches the datasheet specifications for the SOT-1123 package. Ensure compliance with Pb-free and RoHS requirements if environmental regulations apply to the assembly process.
Select this component when a compact PNP solution with integrated biasing is required. The SOT-1123 package is suitable for high-density surface mount applications. Verify that the 4.7 kOhm internal resistance values align with the target circuit's drive requirements and that the 50 Vdc voltage rating exceeds the maximum operating voltage.
This part belongs to the DTA143E/D series of digital transistors manufactured by onsemi. It shares functional characteristics with other members of the family, such as MUN2132 and DTA143EE, but differs in physical package type. The NSBA143EF3 designation specifically identifies the PNP variant housed in the SOT-1123 case style.
Direct replacements include other PNP BRTs with similar electrical ratings and pin configurations, such as the DTA143E or MUN2132, provided the package footprint allows for substitution. Verify that any substitute maintains the same resistor ratios and saturation voltages to ensure circuit compatibility.