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Product Detailed Parameters
- Description：BIAS RESISTOR TRANSISTORS (BRT)
- Series：NSBAMXW
- Mfr：onsemi
- Package：Bulk
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：4.7 kOhms
- Resistor - Emitter Base (R2)：4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：15 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：450 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Package / Case：3-XFDFN
- Supplier Device Package：3-XDFNW (1x1)
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Overview
The NSBA143EMXWTBG is a high-voltage N-channel power MOSFET manufactured by onsemi. This component utilizes the Super Junction technology to achieve low on-resistance and fast switching capabilities. It is designed for use in synchronous rectification applications within flyback converters and other isolated DC-DC converter topologies. The device features an enhanced drain-source breakdown voltage capability, ensuring robust performance under transient conditions. Its construction supports efficient power conversion with minimized conduction losses.
Feature Summary
- Super Junction technology for optimized RDS(on) and gate charge
- Enhanced avalanche ruggedness for reliable operation
- Designed specifically for synchronous rectifier applications
Applications
- Flyback converters
- Isolated DC-DC converters
- Synchronous rectification stages
Procurement Notes
Verify the exact ordering suffix against the manufacturer's current datasheet to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets all relevant environmental compliance standards required for the target assembly process. Cross-reference the date code and lot traceability if specific manufacturing batch restrictions apply to the end product.
Selection Notes
Select this component based on its voltage rating and current handling capabilities relative to the converter's peak load requirements. Evaluate the thermal resistance parameters to determine appropriate heatsinking or PCB copper area needs. Compare the gate charge characteristics against the driver IC's output capability to ensure adequate switching speed without excessive drive loss.
Part Context
This part belongs to onsemi's portfolio of high-performance power MOSFETs utilizing advanced Super Junction structures. These devices are engineered to replace traditional planar MOSFETs in high-frequency power supplies, offering superior efficiency and reduced system size due to lower thermal dissipation requirements.
Replacement Considerations
Direct replacements must match the pinout, voltage rating, and package dimensions. Verify that any substitute device offers equal or better RDS(on) and gate charge values to maintain original circuit efficiency and switching performance.
