NSBA143TF3T5G

NSBA143TF3T5G

  • Description:TRANS PREBIAS PNP 50V SOT1123
  • Series:-

SKU:3781e6a6da3a Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V SOT1123
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 Only
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):4.7 kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:254 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1123
  • Supplier Device Package:SOT-1123

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NSBA143TF3T5G

Overview

The NSBA143TF3T5G is a single PNP pre-biased digital transistor manufactured by onsemi, housed in an SOT-1123 surface-mount package. It integrates a base resistor (R1) of 4.7 kOhms to simplify circuit design and reduce component count. The device supports a maximum collector current (Ic) of 100 mA and a collector-emitter breakdown voltage (Vceo) of 50 V. Key electrical characteristics include a DC current gain (hFE) of at least 160 at 5 mA and 10 V, a saturation voltage (Vce(sat)) of 250 mV maximum at 1 mA base and 10 mA collector currents, and a collector cutoff current of 500 nA maximum. The total power dissipation is rated at 254 mW.

Feature Summary

  • Integrates a 4.7 kOhm base resistor for simplified biasing
  • Single PNP configuration with pre-biased structure
  • Surface-mount SOT-1123 packaging for compact designs

Applications

  • Switching applications in low-voltage digital circuits
  • Interface driving between microcontrollers and peripheral devices
  • Logic level translation in embedded systems

Procurement Notes

Verify the specific suffix 'F3' against the manufacturer's latest datasheet to confirm pinout and electrical tolerances, as suffixes can indicate variations in tape-and-reel specifications or regional compliance standards. Ensure the ordering quantity aligns with the standard reel size of 8000 units if bulk procurement is required, or verify cut-tape availability for prototyping needs.

Selection Notes

Select this component when a single PNP switch with integrated base resistance is required. The 4.7 kOhm internal resistor eliminates the need for external biasing components, saving board space. Verify that the 50 V voltage rating and 100 mA current capacity meet the load requirements. Compare hFE and Vce(sat) specifications against alternative pre-biased transistors to ensure compatibility with the target logic family drive capabilities.

Part Context

This part belongs to the NSBA143EF3 series of pre-biased transistors from onsemi. It is functionally related to other members of the NSBA143 family, such as the NSBA143EF3T5G, though specific internal resistor configurations may vary between NPN and PNP variants within the same series designation.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult the manufacturer's cross-reference tools for equivalent single PNP pre-biased transistors in the SOT-1123 package with similar 4.7 kOhm base resistance and 50 V ratings.

NSBA143TF3T5GNSBA143TF3T5G

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