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The NSBA144EMXWTBG is a PNP digital transistor from onsemi, designed for high-efficiency switching applications. It integrates a single PNP bipolar junction transistor with internal base resistors to simplify circuit design and reduce component count. The device features a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of -100 mA. It operates within a temperature range of -65°C to +150°C and is housed in an XDFNW3 package. Key electrical parameters include a typical input resistance of 10 kOhms and a DC current gain (hFE) minimum of 80 at -5 mA and -10 V.
Verify the exact suffix EMXWTBG against official datasheets to confirm package type and tape/reel specifications. Ensure compatibility with RoHS directives if required by your manufacturing standards. Cross-reference part numbers carefully as minor suffix variations can indicate different packaging or material compositions.
Select this component when a compact PNP solution with integrated biasing is required. Verify that the 50 V rating and -100 mA current capacity meet your load requirements. Consider the XDFNW3 package dimensions for PCB layout constraints compared to standard SOT-23 alternatives.
This part belongs to the NSBAMXW series of digital transistors from onsemi. These devices are engineered to replace discrete resistor-transistor combinations, offering space savings and improved consistency in high-volume consumer and industrial electronics manufacturing.
Check for direct equivalents such as the NSBA114EMXWTBG if pinout and electrical characteristics align with your specific design needs. Always verify functional equivalence through detailed parameter comparison before substitution.