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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V SOT1123
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Bulk
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：1 kOhms
- Resistor - Emitter Base (R2)：1 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：3 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 5mA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：254 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-1123
- Supplier Device Package：SOT-1123
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Overview
The NSBC113EF3T5G is an NPN Digital Transistor (BRT) from onsemi, featuring a monolithic bias resistor network with R1 = 1 kΩ and R2 = 1 kΩ. It integrates a single transistor with series base and base-emitter resistors to replace discrete components. The device supports a maximum collector-emitter voltage of 50 Vdc and continuous collector current of 100 mAdc. Packaged in SOT-1123 (CASE 524AA), it offers a total device dissipation of 254 mW at 25°C with minimum pad conditions. The component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Integrates a single NPN transistor with a monolithic bias resistor network consisting of a series base resistor and a base-emitter resistor.
- Designed to eliminate individual external biasing components, thereby reducing system cost and board space requirements.
Applications
- General-purpose switching applications requiring simplified circuit design
- Driver circuits for logic interfaces where discrete biasing is typically required
- Automotive and industrial systems utilizing AEC-Q101 qualified components
Procurement Notes
Verify the specific ordering suffix T5G confirms the SOT-1123 package and tape-and-reel shipping configuration. Confirm that the NSBC prefix aligns with site-specific control change requirements if applicable to the target application environment. Ensure compliance with Pb-Free and RoHS standards as documented in the datasheet specifications.
Selection Notes
Select this component when a compact NPN solution with integrated 1 kΩ base and emitter resistors is required. The SOT-1123 package provides a small footprint suitable for high-density layouts. Verify that the 100 mA continuous collector current and 50 V breakdown ratings meet the specific load and voltage requirements of the intended switching circuit.
Part Context
This part belongs to the DTC113E family of digital transistors manufactured by onsemi. It shares electrical characteristics with other members like MUN2230 and DTC113EE but utilizes the SOT-1123 package. The NSBC prefix indicates specific manufacturing site or control change requirements compared to standard MUN or DTC prefixes.
Replacement Considerations
MUN2230T1G
FAQ
What are the internal resistance values for the NSBC113EF3T5G?
The device features a monolithic bias network with a series base resistor (R1) of 1 kΩ and a base-emitter resistor (R2) of 1 kΩ.
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter voltage (VCEO) is rated at 50 Vdc.
Which package type does the NSBC113EF3T5G utilize?
It is housed in the SOT-1123 package, also designated as CASE 524AA.
