NSBC114EF3T5G

NSBC114EF3T5G

$0.26
  • Description:TRANS PREBIAS NPN 50V SOT1123
  • Series:-

SKU:224db3ffd334 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V SOT1123
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:254 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1123
  • Supplier Device Package:SOT-1123

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NSBC114EF3T5G

Overview

The NSBC114EF3T5G is a Bias Resistor Transistor (BRT) manufactured by onsemi, featuring a single NPN transistor integrated with a monolithic bias resistor network. It operates with a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device includes an internal base resistor of 10 kOhms and a base-emitter resistor. Packaged in a compact SOT-23-3 surface-mount format, it dissipates up to 260 mW. The component supports an operating temperature range from -55°C to +150°C and provides a minimum DC current gain (hFE) between 160 and 350.

Feature Summary

  • Integrates a single NPN transistor with a monolithic bias resistor network consisting of series base and base-emitter resistors.
  • Designed to replace discrete transistor and external resistor combinations, reducing board space and component count.
  • Provides simplified circuit design through built-in biasing capabilities within a small SMD package.

Applications

  • General-purpose switching applications requiring embedded bias networks.
  • Logic interface circuits where level shifting or driving loads from digital outputs is necessary.
  • Embedded systems utilizing microcontroller GPIO pins for direct control of peripheral devices.

Procurement Notes

Verify the specific suffix 'F3' against the manufacturer's latest datasheet to confirm lead-free status and RoHS compliance details. Ensure the ordering quantity aligns with the reel packaging specifications provided by authorized distributors. Cross-reference the part number with official onsemi documentation to validate availability and any potential obsolescence notices prior to finalizing procurement plans.

Selection Notes

Select this component when a compact solution for NPN switching with integrated biasing is required. The 10 kOhm internal base resistor suits standard logic levels. Verify that the 50 V collector-emitter voltage rating exceeds the maximum circuit voltage. Confirm that the SOT-23-3 package dimensions fit the PCB layout constraints and that the thermal dissipation requirements are met within the specified operating temperature range.

Part Context

This part belongs to the NSBC series of Digital Transistors (BRT) from onsemi. These components are engineered to simplify analog and digital circuit designs by combining transistors with pre-biased resistors. The series offers various resistance values and configurations to accommodate different input drive requirements while maintaining a small footprint suitable for modern electronics manufacturing.

Replacement Considerations

Compatible substitutes include other NPN BRTs with similar 50V ratings and 10k Ohm base resistors, such as the DTC114TM3T5G or MUN2214 variants. Verify pinout compatibility and electrical parameters before substitution.

NSBC114EF3T5GNSBC114EF3T5G
$0.26
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