NSBC114EMXWTBG

NSBC114EMXWTBG

  • Description:BIAS RESISTOR TRANSISTORS (BRT)
  • Series:NSBCMXW

SKU:e99690cabd1f Category: Brand:

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Product Detailed Parameters

  • Description:BIAS RESISTOR TRANSISTORS (BRT)
  • Series:NSBCMXW
  • Mfr:onsemi
  • Package:Bulk
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:450 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount, Wettable Flank
  • Package / Case:3-XFDFN
  • Supplier Device Package:3-XDFNW (1x1)

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NSBC114EMXWTBG

Overview

The NSBC114EMXWTBG is a single NPN digital transistor from the onsemi NSBCMXW series, housed in an XDFNW3 (DFN-3) surface-mount package. It features a typical input resistance of 10 kOhms with a resistor ratio of 1. The device supports a collector-emitter maximum voltage of 50 V and a continuous collector current of 100 mA. Key electrical parameters include a minimum DC current gain (hFE) of 35 at 5 mA and 10 V, and a power dissipation rating of 450 mW. Operating temperatures range from -65°C to +150°C, with saturation voltages specified at 200 mV and 4.9 V under defined conditions.

Feature Summary

  • Integrates a single NPN transistor with built-in bias resistors to simplify circuit design by eliminating external components.
  • Utilizes the compact XDFNW3 package for efficient space-saving implementation in dense PCB layouts.
  • Designed for high-temperature operation with a maximum junction temperature capability of +150°C.

Applications

  • Interface circuits requiring simplified biasing networks
  • Driver stages for low-power loads
  • Inverter applications within consumer electronics

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status directly with the supplier or official documentation prior to procurement. Cross-reference the Mouser part number 863-NSBC114EMXWTBG with the original onsemi component identifier to prevent substitution errors during sourcing.

Selection Notes

Select this component when a single NPN configuration with a 10 kOhm base resistor is required. Ensure the application voltage does not exceed the 50 V collector-emitter limit. Verify that the thermal management strategy accommodates the 450 mW power dissipation in the DFN-3 package. Compare against other NSBCMXW variants if different resistance ratios or gain characteristics are needed.

Part Context

This component belongs to the NSBCMXW family of NPN pre-biased transistors manufactured by onsemi. These devices are engineered to replace discrete transistor-resistor combinations, reducing board space and assembly complexity. The XDFNW3 package represents a modern footprint optimized for automated surface-mount processing.

Replacement Considerations

Direct substitutes within the same series include NSBC124EMXWTBG and NSBC144EMXWTBG, which share identical packages but differ in internal resistor values and gain specifications. Verify pin compatibility and electrical limits before swapping.

NSBC114EMXWTBGNSBC114EMXWTBG

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