NSBC114TF3T5G

NSBC114TF3T5G

$0.08
  • Description:TRANS PREBIAS NPN 50V SOT1123
  • Series:-

SKU:3840812a99bf Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V SOT1123
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Tape & Reel (TR),Bulk
  • Resistors Included:R1 Only
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:254 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1123
  • Supplier Device Package:SOT-1123

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NSBC114TF3T5G

Overview

The NSBC114TF3T5G is a pre-biased NPN digital transistor manufactured by onsemi, housed in the SOT-1123 surface-mount package. It integrates internal biasing resistors to simplify circuit design and reduce component count. Key electrical specifications include a maximum collector-emitter voltage (Vceo) of 50 V and a continuous collector current (Ic) of 100 mA. The device features a base resistor (R1) of 10 kOhms and an emitter resistor (R2) of 47 kOhms. DC current gain (hFE) is guaranteed at a minimum of 80 when tested at Ic = 5 mA and Vce = 10 V. The saturation voltage (Vce(sat)) is limited to a maximum of 250 mV at Ib = 1 mA and Ic = 10 mA. Power dissipation is rated at 254 mW, with a maximum collector cutoff current of 500 nA.

Feature Summary

  • Integrated dual-resistor network for simplified driver interface
  • NPN configuration optimized for switching applications
  • Surface-mount SOT-1123 packaging for compact board layouts

Applications

  • General-purpose switching circuits
  • Driver stages for logic interfaces
  • Level shifting between different voltage domains

Procurement Notes

Verify the complete part number including the suffix T5G to ensure correct tape-and-reel packaging and RoHS compliance status. Confirm that the SOT-1123 footprint matches the target PCB design. Cross-reference the specific resistor values (10k/47k) against the schematic requirements to ensure compatibility with the intended drive currents and logic levels.

Selection Notes

Select this component when a compact NPN switch with fixed biasing is required. The 10 kOhm base resistor suits moderate drive strengths, while the 47 kOhm emitter resistor provides stability. Ensure the application voltage does not exceed 50 V and current remains within the 100 mA limit. Consider thermal constraints given the 254 mW power dissipation rating in the small SOT-1123 package.

Part Context

This part belongs to the NSBC series of pre-biased transistors from onsemi. It shares functional similarities with other BRT devices but is distinguished by its specific resistor ratio and NPN polarity. The SOT-1123 package is common in space-constrained consumer electronics and portable devices where board area is limited.

Replacement Considerations

Direct substitutes may include other NPN BRTs with similar 50V/100mA ratings and comparable R1/R2 values. Verify pinout compatibility for SOT-1123 packages. Alternative part numbers such as MUN2114 or MMUN2233L should be evaluated based on exact resistor tolerances and hFE characteristics.

NSBC114TF3T5GNSBC114TF3T5G
$0.08
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