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The NSBC114YF3T5G is a dual NPN Bipolar Digital Transistor (BRT) manufactured by onsemi. It integrates two NPN transistors with built-in bias resistors into a single surface-mount package, specifically the SOT-963 (also known as SC-88 or SOT-363). The device features a base resistor (R1) of 10 kΩ and an emitter-base resistor (R2) of 47 kΩ for each transistor. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a total power dissipation (Pd) of approximately 339 mW. The component is designed to replace discrete transistor and resistor networks, offering a compact solution for digital switching applications.
Verify the exact suffix F3T5G against the manufacturer's latest datasheet to confirm pinout compatibility and RoHS status. Confirm availability through authorized distributors as lead times may vary. Ensure the ordering part number matches the specific tape-and-reel quantity required for production.
Select this component when a dual NPN configuration with fixed 10k/47k bias resistors is required. Compare the 339 mW power dissipation rating against thermal constraints. Verify that the SOT-963 package dimensions fit the available footprint. Consider single-transistor alternatives if only one channel is needed to optimize cost and space.
This part belongs to the NSBC114 series of complementary and dual bipolar digital transistors from onsemi. These devices are engineered to simplify circuit design by replacing multiple discrete components. The series is widely used in consumer electronics and industrial control systems where space-saving and simplified bill-of-materials are critical design factors.
Verified substitutes include the NSBC114YDP6T5G and NSBC114TF3T5G. Both parts share the same electrical characteristics and pinout configuration within the SOT-963 package family. Cross-reference datasheets to ensure identical resistor values and thermal ratings before substitution.