NSBC115TF3T5G

Overview

The NSBC115TF3T5G is a dual NPN digital transistor manufactured by onsemi, housed in an SOT-563-6 surface-mount package. It integrates two NPN transistors with built-in bias resistors to simplify circuit design. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device features a typical input resistance of 100 kOhms with a resistor ratio of 1. Power dissipation is rated at 357 mW, and the unit operates within a temperature range of -55°C to +150°C.

Feature Summary

• Dual NPN configuration integrated into a single compact SMD package for space-efficient designs.
• Built-in bias resistors eliminate the need for external components, reducing board space and assembly complexity.
• High thermal stability supports operation across a wide industrial temperature range.

Applications

• General-purpose switching applications in consumer electronics.
• Interface circuits requiring level shifting or buffering.
• Driver stages for low-current loads in portable devices.

Procurement Notes

Verify the specific suffix 'T5G' against official onsemi documentation to confirm tape-and-reel packaging and RoHS compliance status. Ensure the source document explicitly lists this part number to avoid confusion with similar series members like NSBC115EDXV6T1G. Cross-reference the manufacturer's latest datasheet revision for any potential pinout or electrical characteristic updates before finalizing procurement specifications.

Selection Notes

Select this component when a dual NPN digital transistor with 50V rating and 100mA current capacity is required in an SOT-563 package. Confirm that the 100kOhm internal resistor value matches the target circuit's drive requirements. Verify compatibility with the intended operating temperature range and ensure the application does not exceed the 357mW power dissipation limit under worst-case conditions.

Part Context

This component belongs to the NSBC115TF3 family of digital transistors from onsemi. These devices are designed as drop-in replacements for discrete resistor-transistor networks, offering improved performance and reduced footprint. The series is commonly used in applications where multiple switching elements are needed in a small form factor, such as mobile phones and handheld instruments.

Replacement Considerations

Consult onsemi's official cross-reference data for verified substitutes. Potential alternatives may include other dual NPN digital transistors in SOT-563 packages with matching 50V/100mA ratings and similar internal resistor values. Always verify pinout compatibility and electrical specifications before substitution.