NSBC123EF3T5G

NSBC123EF3T5G

$0.08
  • Description:TRANS PREBIAS NPN 50V SOT1123
  • Series:-

SKU:5ecff23a7bf1 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V SOT1123
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Bulk
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):2.2 kOhms
  • Resistor - Emitter Base (R2):2.2 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:8 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 5mA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:254 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1123
  • Supplier Device Package:SOT-1123

Download product information

NSBC123EF3T5G

Overview

The NSBC123EF3T5G is a Bias Resistor Transistor (BRT) manufactured by onsemi, belonging to the NSBC123EF3 series. It is an NPN digital transistor housed in a SOT-1123 surface-mount package. The device integrates a single NPN transistor with a monolithic bias network consisting of a series base resistor and a base-emitter resistor. This integration replaces discrete components, reducing board space and system cost. Key electrical ratings include a collector-emitter voltage of 50 V and a continuous collector current of 100 mA.

Feature Summary

  • Integrates a single NPN transistor with a monolithic bias network comprising two resistors.
  • Eliminates individual external biasing components to reduce component count.
  • Designed to simplify circuit design and minimize printed circuit board area.

Applications

  • Replacing discrete transistor and resistor networks in digital logic circuits
  • Switching loads in low-power electronic systems
  • Controlling inputs for integrated circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's datasheet to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status through official documentation before procurement. Ensure the selected distributor provides valid traceability data for the component lot.

Selection Notes

Select this component when a compact NPN switching solution with built-in biasing is required. Verify that the 50 V collector-emitter voltage and 100 mA current rating meet the target circuit requirements. Compare internal resistance values in the datasheet against the driving source impedance to ensure proper saturation.

Part Context

This part belongs to the NSBC123EF3 family of digital transistors from onsemi. These devices are engineered to serve as direct replacements for discrete biasing networks. The SOT-1123 package offers a small footprint suitable for dense surface-mount assemblies.

Replacement Considerations

Publicly confirmed substitute part numbers for this specific model were not identified in the provided reference material. Cross-reference with other NPN BRTs in the SOT-1123 package only after verifying matching electrical parameters and pin configurations.

NSBC123EF3T5GNSBC123EF3T5G
$0.08
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