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The NSBC123JF3T5G is a dual NPN digital transistor (BRT) manufactured by onsemi, designed for surface-mount applications. It integrates two NPN transistors with monolithic bias resistor networks within a single SOT-563-6 package. The device supports a collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Typical input resistance is specified at 2.2 kOhms with a resistor ratio of 0.047. Power dissipation reaches 357 mW, and the unit operates across a temperature range from -55°C to +150°C.
Verify the exact part number against official manufacturer documentation before procurement. Distributor listings may contain typos or mismatched suffixes. Confirm RoHS compliance status and specific tape-and-reel quantities directly with the supplier or manufacturer representative to ensure alignment with project requirements.
Select this component when a dual NPN configuration with integrated biasing is required in a small footprint. Ensure the 50 V voltage rating and 100 mA current capacity meet the target circuit demands. Compare the SOT-563-6 pinout against existing designs to verify compatibility with the intended PCB layout and thermal management strategy.
This component belongs to onsemi's family of Bipolar Resistor Transistors (BRTs). These devices combine transistors and resistors on a single silicon die to simplify circuit design. The dual NPN variant offers a cost-effective alternative to discrete transistor-resistor combinations, particularly in space-constrained portable and automotive electronics.
Publicly confirmed substitute part numbers for NSBC123JF3T5G were not identified in the provided source material. Verify electrical parameters and pinout compatibility if considering alternative manufacturers or series from other vendors.