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The NSBC123TF3T5G is a dual NPN digital transistor manufactured by onsemi, housed in an SOT-563 surface-mount package. It integrates two NPN transistors with built-in bias resistors to simplify circuit design and reduce component count. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Each transistor features a typical input resistance of 4.7 kOhms with a resistor ratio of 1:1. The unit offers a minimum DC current gain (hFE) of 8 and can dissipate up to 357 mW of power. It operates within a temperature range of -55°C to +150°C.
Verify the specific suffix TF3 against official datasheets to confirm pinout and electrical characteristics, as suffixes often denote tape-and-reel quantities or specific manufacturing variants. Confirm RoHS compliance status through the manufacturer's product compliance documentation before integration into regulated assemblies.
Select this component when a dual NPN solution with fixed biasing is required to minimize board space and assembly steps. Ensure the 4.7 kOhm input resistance aligns with the driving source capabilities and that the 50V voltage rating exceeds the maximum circuit potential under all operating conditions.
This part belongs to the NSBC series of pre-biased transistors from onsemi. It serves as a compact alternative to discrete resistor-transistor networks, offering consistent performance and reduced footprint compared to individual components in similar dual-transistor configurations.
Direct substitutes include other dual NPN digital transistors in SOT-563 packages with matching 50V/100mA ratings and similar bias resistor values, such as the NSBC123EDXV6T1G or equivalent parts from other manufacturers like ROHM or STMicroelectronics.