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The NSBC124EF3T5G is a single NPN digital transistor manufactured by onsemi, housed in an SOT-1123 surface-mount package. It features integrated biasing resistors with a typical base resistor (R1) of 4.7 kOhms and an emitter resistor (R2) of 47 kOhms. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. It operates within a temperature range of -55°C to +150°C and has a maximum power dissipation of 254 mW.
Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm RoHS compliance status and check for End-of-Life notifications prior to finalizing procurement plans. Ensure storage conditions adhere to moisture sensitivity level requirements to maintain device reliability during assembly processes.
Select this component when a single NPN configuration with specific 4.7k/47k resistor ratios is required. Compare against alternative series such as NSBA144EF3T5G if PNP polarity is needed instead. Evaluate thermal management needs based on the 254 mW power dissipation limit in the SOT-1123 package for the target application environment.
This part belongs to the NSBC143ZF3T5G family of pre-biased transistors from onsemi. While sharing similar electrical characteristics and packaging, variations exist in internal resistor values and transistor polarity configurations across the broader product line. The NSBC124EF3T5G specifically denotes the NPN variant with its unique resistor network.