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The NSBC143EF3T5G is a single NPN pre-biased bipolar junction transistor manufactured by onsemi. It integrates internal base and emitter resistors to simplify circuit design. The device features a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Internal resistance values include a base resistor (R1) of 4.7 kOhms and an emitter resistor (R2) of 47 kOhms. Key electrical characteristics include a DC current gain (hFE) of at least 80 at 5 mA and 10 V, and a saturation voltage (Vce(sat)) of no more than 250 mV at 1 mA base and 10 mA collector currents. The component is housed in a surface-mount SOT-1123 package with a maximum power dissipation of 254 mW.
Verify the specific suffix F3 against official datasheets to confirm pinout and electrical tolerances. Ensure the ordering code matches the required tape-and-reel quantity. Cross-reference the manufacturer part number with authorized distributor catalogs to confirm availability and authenticity before procurement.
Select this component when a single NPN transistor with integrated biasing resistors is required. Verify that the 50 V breakdown voltage and 100 mA current rating meet the application's peak demands. Confirm that the SOT-1123 package dimensions fit the PCB layout constraints and thermal requirements.
This part belongs to the NSBC143 series of pre-biased transistors from onsemi. These devices are designed to replace discrete resistor-transistor combinations, reducing board space and assembly costs. The series typically includes variants with different resistor ratios and configurations for various logic families.
Check for direct substitutes such as the NSBC143EDXV6T1 if a dual-channel configuration is acceptable. Verify pin compatibility with other SOT-1123 pre-biased transistors from different manufacturers before substitution.