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The NSBC143ZF3T5G is an NPN Digital Transistor (BRT) from onsemi, integrating a single transistor with a monolithic bias resistor network. It features a series base resistor (R1) of 4.7 kΩ and a base-emitter resistor (R2) of 47 kΩ. The device supports a maximum collector current of 100 mA and withstands collector-emitter voltages up to 50 V. Electrical characteristics include a minimum DC current gain of 80 at 5 mA and 10 V, with a maximum saturation voltage of 250 mV at 10 mA collector current. Thermal dissipation reaches 254 mW in the SOT-1123 package.
Verify the specific ordering suffix T5G corresponds to the required tape and reel packaging configuration. Confirm that the SOT-1123 package style matches the intended footprint requirements. Ensure compliance with RoHS standards and lead-free specifications as indicated in the manufacturer documentation before finalizing procurement orders.
Select this component when space constraints require integration of bias resistors with the switching element. Verify that the 4.7 kΩ base resistance provides adequate drive capability for the target load current. Check thermal derating curves if operating near maximum power dissipation limits in enclosed environments.
This part belongs to the DTC143Z family of digital transistors manufactured by onsemi. It shares functional similarities with MUN2233 and MMUN2233L but utilizes the compact SOT-1123 package. The device is designed to streamline designs where standard NPN switching is required without external resistor networks.
Direct substitutes within the same family include MUN2233T1G and MMUN2233LT1G, though these utilize different packages such as SC-59 and SOT-23 respectively. Cross-package replacements require careful verification of pinout compatibility and physical footprint dimensions.