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Product Detailed Parameters
- Description：BIAS RESISTOR TRANSISTORS (BRT)
- Series：NSBCMXW
- Mfr：onsemi
- Package：Bulk
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：4.7 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：450 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Package / Case：3-XFDFN
- Supplier Device Package：3-XDFNW (1x1)
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Overview
The NSBC143ZMXWTBG is a single NPN digital transistor from the onsemi NSBCMXW series, housed in an XDFNW3 (DFN-3) surface-mount package. It features a typical input resistance of 4.7 kOhms and a resistor ratio of 0.1. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. DC current gain (hFE) is specified at a minimum of 80 at 5 mA and 10 V. Power dissipation reaches 450 mW, with an operating temperature range spanning from -65 C to +150 C.
Feature Summary
- Integrates an NPN bipolar junction transistor with built-in biasing resistors for simplified circuit design.
- Utilizes a compact DFN-3 footprint suitable for high-density surface-mount applications.
- Provides robust thermal performance with a maximum junction temperature rating of 150 C.
Applications
- General-purpose switching circuits requiring pre-biased logic interfaces.
- Driver stages for low-power loads in consumer electronics.
- Level shifting applications between different voltage domains.
Procurement Notes
Verify the complete part number including the suffix WTBG to ensure correct packaging configuration. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Cross-reference the specific datasheet revision to validate electrical characteristics against your design requirements.
Selection Notes
Select this component when a single NPN digital transistor with a 4.7 kOhm base resistor is required. Ensure the application voltage does not exceed the 50 V collector-emitter limit. Consider the DFN-3 package dimensions for PCB layout constraints and verify that the 450 mW power dissipation capability meets thermal management needs.
Part Context
This part belongs to the NSBCMXW family of digital transistors manufactured by onsemi. These devices combine transistors and resistors into a single package to reduce board space and assembly costs. The NSBC143 variant specifically denotes the NPN configuration with defined internal resistance values.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with alternative suppliers by matching the NPN polarity, 50 V rating, 100 mA current capacity, and DFN-3 package type.
