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Product Detailed Parameters
- Description：BIAS RESISTOR TRANSISTORS (BRT)
- Series：NSBCMXW
- Mfr：onsemi
- Package：Bulk
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：47 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：450 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Package / Case：3-XFDFN
- Supplier Device Package：3-XDFNW (1x1)
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Overview
The NSBC144EMXWTBG is a single NPN digital transistor from the onsemi NSBCMXW series, housed in an XDFNW3 (DFN-3) surface-mount package. It features a typical input resistance of 47 kOhms with a resistor ratio of 1. The device supports a collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Key electrical parameters include a minimum DC current gain (hFE) of 80 at 5 mA and 10 V, and a power dissipation rating of 450 mW. It operates within a temperature range of -65°C to +150°C.
Feature Summary
- Integrates NPN transistor with bias resistors to replace discrete components
- Designed for high-density surface-mount applications via compact DFN-3 package
- Optimized for low-voltage switching with defined saturation characteristics
Applications
- General-purpose switching circuits
- Driver stages for logic interfaces
- Battery-powered portable devices requiring space-saving solutions
Procurement Notes
Verify the complete part number including the suffix EMXWTBG to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure storage conditions align with moisture sensitivity levels specified in the datasheet to maintain component reliability during assembly processes.
Selection Notes
Select this component when a single NPN configuration with 47 kOhm base resistance is required. Compare against NSBC114EMXWTBG if a lower 10 kOhm input resistance is needed for faster switching or higher drive currents. Verify that the 50V breakdown voltage and 100mA current limits meet the specific circuit requirements.
Part Context
This part belongs to the NSBCMXW family of NPN bias resistor transistors. These devices are engineered to simplify circuit design by combining a transistor and resistors into a single small-outline package. The family offers various resistance values to accommodate different logic families and drive requirements while maintaining consistent physical dimensions.
Replacement Considerations
Check for direct equivalents such as NSBC114EMXWTBG for different resistance values. Verify pinout compatibility with existing PCB layouts before substituting with parts from other manufacturers.
